Remote plasma ion beam sputtering device
We achieve film formation by freely controlling reactive sputtering and alloy sputtering.
Independent current control is performed for the ion source, target, and substrate. With independent control, not only the sputter rate but also various reactive sputtering processes such as oxide and nitride films can be freely controlled. This device strongly supports advanced material research and process development, enabling the deposition of difficult-to-deposit materials such as ferromagnetic films, Co-sputtering of metal and ceramic targets, and dielectric/insulating films from metal targets. Independent control of ion supply and sputter rate → Control of sputter rate, film quality, and crystal structure → Control of ionization rate of target materials High-directionality film deposition → High-directionality film deposition characteristic of ion beam sputtering Multi-target mechanism → Wide-ranging multilayer film deposition Independent control of multiple targets → Co-sputtering alloy deposition by controlling the sputter rate of each target → Multilayer deposition by switching targets Conformal film deposition through bias application control to the substrate → Conformal film deposition even under adverse conditions such as deep trenches and overhangs.
- Company：ティー・ケイ・エス
- Price：Other
